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IRF510SPBF
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IRF510SPBF

  • 所属类别:场效应管
  • 产品名称:N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
  • 厂商:Vishay
  • 生产批号:11+
  • 封装:TO-263
  • 库存状态:有库存
  • 库存量:9000
  • 最低订购量:1
  • 详细资料:点击查找IRF510SPBF的pdf资料
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  • 产品介绍

IRF510SPBF  N沟道增强型立式DMOS功率场效应管  5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

IRF510SPBF相关的IC还有:


型号厂商批号封装说明
UC2866 TI10+16PDIP谐振模式电源控制器
IRF510STRRPBF Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRR Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRLPBF Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510STRL Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510S Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510PBF Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF511 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 RES 4.75K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA
IRF512 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 N-Channel Power MOSFETs, 5.5 A, 60-100V

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型号厂商批号封装说明
IRF510S Vishay11+TO-263N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510PBF Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF510 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
IRF511 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 RES 4.75K-OHM 1% 0.125W 100PPM THICK-FILM SMD-0805 5K/REEL-7IN-PA
IRF512 Vishay11+TO-220N沟道增强型立式DMOS功率场效应管 N-Channel Power MOSFETs, 5.5 A, 60-100V
IRF513 Vishay11+TO-220N-Channel Power MOSFETs, 5.5 A, 60-100V
IRF520STRR Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520STRL Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520S Vishay10+TO-2639.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520PBF Vishay10+TO-2209.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF520 Vishay10+TO-2209.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N沟道增强型功率MOS场效应管)
IRF522 Vishay10+TO-220N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
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IRF530STRRPBF Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530STRR Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530STRLPBF Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530STRL Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530SPBF Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530S Vishay10+TO-26314A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)
IRF530PBF Vishay10+TO-22014A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N沟道增强型功率MOS场效应管)

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