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IRF634NS
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IRF634NS

  • 所属类别:场效应管
  • 产品名称:N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
  • 厂商:IR
  • 生产批号:10+
  • 封装:TO-220
  • 库存状态:有库存
  • 库存量:8000
  • 最低订购量:1
  • 详细资料:点击查找IRF634NS的pdf资料
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  • 产品介绍

IRF634NS   N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))

IRF634NS相关的IC还有:


型号厂商批号封装说明
IRF634STRL IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634SPBF IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634S IR10+TO-263N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634PBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634NSPBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634NPBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634N IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634 IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF640PBF IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
UC2526A TI10+18PDIP, 18SOIC, 20PLCC稳压脉宽调制器

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型号厂商批号封装说明
IRF634NPBF IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634N IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF634 IR10+TO-220N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A))
IRF640PBF IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640LPBF IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640L IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 IR10+TO-220Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRRPBF IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRR IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRLPBF IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRL IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640SPBF IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640S IR10+TO-263Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF642 IR10+TO-220N-Channel Power MOSFETs, 18A, 150-200V
IRF641 IR10+TO-220N-Channel Power MOSFETs, 18A, 150-200V
IRF644STRRPBF IR10+TO-263Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644STRR IR10+TO-263Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644STRLPBF IR10+TO-263Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644STRL IR10+TO-263Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
IRF644SPBF IR10+TO-263Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

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