型号 | 厂商 | 批号 | 封装 | 说明 |
IRF634NPBF
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A)) |
IRF634N
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A)) |
IRF634
| IR | 10+ | TO-220 | N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.45Ω,漏电流为8.1A)) |
IRF640PBF
| IR | 10+ | TO-220 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640LPBF
| IR | 10+ | TO-220 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640L
| IR | 10+ | TO-220 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640
| IR | 10+ | TO-220 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640STRRPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640STRR
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640STRLPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640STRL
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640SPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF640S
| IR | 10+ | TO-263 | Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) |
IRF642
| IR | 10+ | TO-220 | N-Channel Power MOSFETs, 18A, 150-200V |
IRF641
| IR | 10+ | TO-220 | N-Channel Power MOSFETs, 18A, 150-200V |
IRF644STRRPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
IRF644STRR
| IR | 10+ | TO-263 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
IRF644STRLPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
IRF644STRL
| IR | 10+ | TO-263 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |
IRF644SPBF
| IR | 10+ | TO-263 | Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) |