型号 | 厂商 | 批号 | 封装 | 说明 |
IPD04N03LB
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD04N03LA
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD040N03LG
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD03N03LB
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD03N03LA
| INFINEON | 2010+ | SOT-252 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPBH6N03LA
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPB80N06S2L11
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB70N10SL16
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB47N10S33
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB26CNE8N
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPB26CN10N
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPB16CNE8N
| INFINEON | 2010+ | TO263-3-2 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max) |
IPB16CN10N
| INFINEON | 2010+ | TO263-3-2 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.0 mOhm; RDS (on) (max) |
IPB14N03LA
| INFINEON | 2010+ | TO263-3-2 | 功率晶体管 N-Channel MOSFETs (20V...150V) |
IPB13N03LB
| INFINEON | 2010+ | TO263-3-2 | 功率晶体管 N-Channel MOSFETs (20V...150V) |
IPB12CNE8N
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max) |
IPB12CN10N
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max) |
IPB11N03LA
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) ( |
IPB10N03LB
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.6 mOhm; RDS (on) (max) ( |
IPB09N03LA
| INFINEON | 2010+ | TO-263 | 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.9 mOhm; RDS (on) (max) ( |