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SFP9540
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SFP9540

  • 所属类别:场效应管
  • 产品名称:P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
  • 厂商:FAIRCHILD
  • 生产批号:2010+
  • 封装:TO-220
  • 库存状态:有库存
  • 库存量:12000
  • 最低订购量:1
  • 详细资料:点击查找SFP9540的pdf资料
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  • 产品介绍

SFP9540   P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)

SFP9540相关的IC还有:


型号厂商批号封装说明
PCA9540BDP,118 NXP10+ UARTS AND EXPANSION PRODUCTS
031-9540-007 ITT Cannon10+ 031-9540-007 383
51F9540 IBM93+N/A全新库存
IRF9540NS IR12+TO-263场效应管全新原装
IRF9540L IR05+TO-262全新原装
IRFS9540 Fairchild05+TO-263N/A
IRF9540-IR IR03+TO-220全新原装
IRF9540NL IR05+TO-262全新原装
IRF9540NLPBF IR10+SOT-263HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
IRF9540STRR IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540STRL IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540SPBF IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540S IR10+TO-263Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
IRF9540PBF IR10+TO-220Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
SFP9540 FAIRCHILD2010+TO-220P-Channel Power MOSFET(漏源电压为-100V的P沟道功率MOS场效应管)
IRF9540NSTRLPBF IR10+TO-263-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF9540NS with Lead Free packaging shipped on Tape and Reel Left.
IRF9540NSTRRPBF IR10+TO-220AUTOMOTIVE MOSFET
IRF9540N INTEL07+BGA 
IRF9540 IR10+DIP 
IRF9540NPBF IR09+DIP 

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型号厂商批号封装说明
RFP70N06 FAIRCHILD2010+TO-22070A, 60V, 0.014 Ohm, N-Channel Power MOSFETs; Package: TO-220; No of Pins: 3; Container: Rail
RFD16N05LSM FAIRCHILD2010+TO-25216A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 沟道功率MOS场效应管)
RFD14N05LSM9A FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05LSM FAIRCHILD2010+TO-25214A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
RFD14N05L FAIRCHILD2010+TO-25114A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 逻辑电平N 沟道功率MOS场效应管)
NDT451AN FAIRCHILD2010+SOT-223N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N沟道增强型场效应管(漏电流7.2A, 漏源电压30V,导通电阻0.035Ω))
NDS356AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.1A,-30V,0.3Ω)(P沟道逻辑增强型MOS场效应管(漏电流-1.1A, 漏源电压-30V,导通电阻0.3Ω))
NDS355AN FAIRCHILD2010+SOT-23-3N-Channel Logic Level Enhancement Mode Field Effect Transistor(1.7A,30V,0.125Ω)(N沟道逻辑增强型MOS场效应管(漏电流1.7A, 漏源电压30V,导通电阻0.125Ω))
NDS352AP FAIRCHILD2010+SOT-23-3P-Channel Logic Level Enhancement Mode Field Effect Transistor(-0.9A,-30V,0.5Ω)(P沟道逻辑增强型MOS场效应管(漏电流-0.9A, 漏源电压-30V,导通电阻0.5Ω))
FDN5630_NL FAIRCHILD2010+SOT-2360V N-Channel PowerTrench MOSFET; Package: SuperSOT; No of Pins: 3; Container: Tape & Reel
MTP3055VL FAIRCHILD2010+TO-220N沟道增强模式的逻辑电平场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor; Package: TO-220AB; No of Pins: 3; Container: Rail
HUF76407D3ST FAIRCHILD2010+TO-25211A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
HUF75882G3 FAIRCHILD2010+TO-22075A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET(75A, 100V, 0.008Ω N沟道逻辑电平功率MOS场效应管)
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HUF75545P3 FAIRCHILD2010+TO-22075A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET(75A, 80V, 0.010Ω N沟道逻辑电平功率MOS场效应管
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