主页 > 产品中心 > 场效应管
RJK0355DPA
产品图片仅供参考
欢迎索取产品详细资料

RJK0355DPA

  • 所属类别：场效应管
  • 产品名称：MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0082; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0118]; RDS (ON) typ. (ohm) @
  • 厂商：RENESAS
  • 生产批号：10+
  • 封装：QFN8
  • 库存状态：有库存
  • 库存量：7000
  • 最低订购量：1
  • 详细资料：点击查找RJK0355DPA的pdf资料
  • 点击询价
联系我们 在线客服1 在线客服2 点击发送邮件
  • 产品介绍

RJK0355DPA    MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0082; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0118]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 860; toff (µs) typ: -; Package: WPAK

与RJK0355DPA相关的IC还有：


型号厂商批号封装说明
RJK0355DPA RENESAS10+QFN8MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0082; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0118]; RDS (ON) typ. (ohm) @

热门搜索


型号厂商批号封装说明
F3069F25V Renesas23+QFP100IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC22+DIPphotoelectric sensors
M393A8G40BB4-CWE Samsung21+BGASamsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba21+DIPOptocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt24+继电器瞬时继电器
RC16M23D28 SOURIAU-SUNBANK2023+连接器Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi2021+模块Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations24+连接器CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation24+连接器Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP24+工具NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT24+连接器Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE24+DIPHSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT2023+连接器Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC)24+工具DMC压线钳 原装进口正品
CMF8342T CMF23+模块T系列三极管放大器模块
RWR78N39R2FR Vishay24+DIPRES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI22+继电器STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱2024+工具精密位置检测器
TFPT1206L1001FV Vishay Dale24+1206SENSOR PTC 1KOHM 1% 1206

RENESAS品牌产品推荐


型号厂商批号封装说明
RJK0364DPA RENESAS10+QFN8MOSFET, Switching; VDSS (V): 30; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.
RJK0365DPA RENESAS10+QFN8MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.007; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0096]; RDS (ON) typ. (ohm) @2
RJK0366DPA RENESAS10+QFN8MOSFET, Switching; VDSS (V): 30; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.012]; RDS (ON) typ. (ohm) @2
RJK0368DPA RENESAS10+QFN8MOSFET, Switching; VDSS (V): 30; ID (A): 20; Pch : -; RDS (ON) typ. (ohm) @10V: 0.011; RDS (ON) typ. (ohm) @4V[4.5V]: [0.016]; RDS (ON) typ. (ohm) @2.
HAT2116H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2137H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2143H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2168H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2170H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2171H-EL-E RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2279H-EL-E RENESAS10+LEPAKMOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0095; RDS (ON) typ. (ohm) @4V[4.5V]: [0.011]; RDS (ON) typ. (ohm) @
HAT2284H-EL-E RENESAS10+LEPAKMOSFET, Switching; VDSS (V): 30; ID (A): 35; Pch : 55; RDS (ON) typ. (ohm) @10V: 0.0034; RDS (ON) typ. (ohm) @4V[4.5V]: [0.005]; RDS (ON) typ. (ohm) @
HAT2137H RENESAS10+TO-252MOSFET, Switching; VDSS (V): 40; ID (A): 45; Pch : 30; RDS (ON) typ. (ohm) @10V: 3.8; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -;
HAT2170H RENESAS10+LFPKASilicon N Channel MOSFET Power Switching
HAT2171H RENESAS10+LFPKASilicon N Channel Power MOS FET Power Switching
HAT2284H RENESAS10+LFPKAMOSFET, Switching; VDSS (V): 30; ID (A): 35; Pch : 55; RDS (ON) typ. (ohm) @10V: 0.0034; RDS (ON) typ. (ohm) @4V[4.5V]: [0.005]; RDS (ON) typ. (ohm) @
HAT2116H RENESAS10+TO252-4MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0105]; RDS (ON) typ. (ohm)
HAT2143H RENESAS10+LEPAKSilicon N Channel Power MOS FET Power Switching
HAT2168H RENESAS10+LEPAKMOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0091]; RDS (ON) typ. (ohm) @
HAT2168N RENESAS10+LEPAKMOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0063; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0091]; RDS (ON) typ. (ohm) @

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号